Celle solari a base di film sottili di silicio micro-cristallino idrogenato (μc-Si:H) (S. Binetti, M. Acciarri, E. Bonera, M. Guzzi)

This research activity, has been mainly developed in a frame of an European Project: NANOPHOTO 2006-2009, Contract No. 013944 in collaboration with L-NESS center (http://lness.como.polimi.it/)

It has been addressed at the understanding of the quantitative correlations between process parameters of a Low Energy Plasma Enhanced Chemical Vapor Deposition (LEPECVD) reactor (temperature, reactant gas composition, plasma energy and density) and the structural, optical, electrical and physico- chemical properties of nc-silicon, grown bt this technique.

These goals has been experimentally quantified by :
• the growth of undoped and doped nc-Si layers on convenient substrates by the LEPECVD process using silane, phosphine, diborane and hydrogen mixtures
• the quantitative experimental determination of the plasma temperature and energy
• the quantitative experimental determination of the correlation between the crystallinity fraction, the grain size/shape/orientation, the hydrogen content, the density of the recombination centres, the strain/stress state, the carrier mobility and diffusion length in undoped and n-type and p-type films, in view of the determination of the critical percolation distance and of the optimisation of the carrier collection and of the quantum confinement effects.
• the quantitative determination of the correlation between microstructure, hydrogen content, optical gap and optical absorption coefficient, in view of an improved minority carrier generation
• the development, testing (both at the laboratory level) of prototype homojunction nc-Si solar cells


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